RESEARCH ON SiC FOR INTERFACE QUALITY

Abstract

A new thermal oxidation process of growing a dry oxide then following with a wet re-oxidationanneal produces an oxide with the dielectric strength of a dry oxide and the high-quality interface of a wetoxide. MIS field effect transistors (MISFET’s) with a ONO gate insulator had surface channel mobilities similarto MISFET’s with thermal gate oxides, and demonstrated a lifetime of 10 days at 335o C and 15V bias. Thelifetime of the ONO MISFET was a factor of 100 higher then for devices fabricated with deposited oxides, whichhad been the prior state of the art for high-temperature MISFET 's on SiC

Keywords

• Reliability silicon
• carbide
• devices