Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes
Siwei Liang,
Quanbin Zhou,
Xianhui Li,
Ming Zhong,
Hong Wang
Affiliations
Siwei Liang
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Quanbin Zhou
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Xianhui Li
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Ming Zhong
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
Hong Wang
Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10−3 Ω·cm2. These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.
