Nature Communications (Jun 2019)

Lasing in strained germanium microbridges

  • F. T. Armand Pilon,
  • A. Lyasota,
  • Y.-M. Niquet,
  • V. Reboud,
  • V. Calvo,
  • N. Pauc,
  • J. Widiez,
  • C. Bonzon,
  • J. M. Hartmann,
  • A. Chelnokov,
  • J. Faist,
  • H. Sigg

DOI
https://doi.org/10.1038/s41467-019-10655-6
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 8

Abstract

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Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.