Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Qilin Hua; Guoyun Gao; Chunsheng Jiang; Jinran Yu; Junlu Sun; Taiping Zhang; Bin Gao; Weijun Cheng; Renrong Liang; He Qian; Weiguo Hu; Qijun Sun; Zhong Lin Wang; Huaqiang Wu

doi:10.1038/s41467-020-20051-0

Nature Communications (Dec 2020)

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Qilin Hua,
Guoyun Gao,
Chunsheng Jiang,
Jinran Yu,
Junlu Sun,
Taiping Zhang,
Bin Gao,
Weijun Cheng,
Renrong Liang,
He Qian,
Weiguo Hu,
Qijun Sun,
Zhong Lin Wang,
Huaqiang Wu

Affiliations

Qilin Hua: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
Guoyun Gao: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Chunsheng Jiang: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
Jinran Yu: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Junlu Sun: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Taiping Zhang: Department of Electrical Engineering, Tsinghua University
Bin Gao: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
Weijun Cheng: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
Renrong Liang: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
He Qian: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University
Weiguo Hu: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Qijun Sun: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Zhong Lin Wang: CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences
Huaqiang Wu: Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University

DOI: https://doi.org/10.1038/s41467-020-20051-0
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 10

Abstract

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Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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