Crystals (Aug 2019)

Boundaries of the <i>X</i> Phases in Sb–Te and Bi–Te Binary Alloy Systems

  • Kouichi Kifune,
  • Takuya Wakiyama,
  • Hiroki Kanaya,
  • Yoshiki Kubota,
  • Toshiyuki Matsunaga

DOI
https://doi.org/10.3390/cryst9090447
Journal volume & issue
Vol. 9, no. 9
p. 447

Abstract

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Sb−Te and Bi−Te compounds are key components of thermoelectric or phase change recording devices. These two binary systems form commensurately/incommensurately modulated long-period layer stacking structures known as homologous phases that comprise discrete intermetallic compounds and X phases. In the latter, the homologous structures are not discrete but rather appear continuously with varying stacking periods that depend on the binary composition. However, the regions over which these X phases exist have not yet been clarified. In this study, precise synchrotron X-ray diffraction analyses of various specimens were conducted. The results demonstrate that the X phase regions are located between Sb20Te3 and Sb5Te6 in the Sb−Te system and between Bi8Te3 and Bi4Te5 in the Bi−Te system.

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