Cathodoluminescence Spectroscopy in Graded In<sub>x</sub>Ga<sub>1−x</sub>N
Xiaofang Zhao,
Tao Wang,
Bowen Sheng,
Xiantong Zheng,
Li Chen,
Haihui Liu,
Chao He,
Jun Xu,
Rui Zhu,
Xinqiang Wang
Affiliations
Xiaofang Zhao
School of Materials Science and Engineering, Tiangong University, Tianjin 300387, China
Tao Wang
Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Bowen Sheng
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
Xiantong Zheng
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
Li Chen
Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Haihui Liu
School of Materials Science and Engineering, Tiangong University, Tianjin 300387, China
Chao He
Beijing Goldenscope Technology Co., Ltd., Beijing 100190, China
Jun Xu
Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Rui Zhu
Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
Xinqiang Wang
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
InGaN materials are widely used in optoelectronic devices due to their excellent optical properties. Since the emission wavelength of the full-composition-graded InxGa1−xN films perfectly matches the solar spectrum, providing a full-spectrum response, this makes them suitable for the manufacturing of high-efficiency optoelectronic devices. It is extremely important to study the optical properties of materials, but there are very few studies of the luminescence of full-composition-graded InxGa1−xN ternary alloy. In this work, the optical properties of full-composition-graded InxGa1−xN films are studied by cathodoluminescence (CL). The CL spectra with multiple luminescence peaks in the range of 365–1000 nm were acquired in the cross-sectional and plan-view directions. The CL spectroscopy studies were carried out inside and outside of microplates formed under the indium droplets on the InGaN surface, which found that the intensity of the light emission peaks inside and outside of microplates differed significantly. Additionally, the paired defects structure is studied by using the spectroscopic method. A detailed CL spectroscopy study paves the way for the growth and device optimization of high-quality, full-composition-graded InxGa1−xN ternary alloy materials.
