APL Materials (Jun 2023)

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

  • Hsien-Lien Huang,
  • Christopher Chae,
  • Jared M. Johnson,
  • Alexander Senckowski,
  • Shivam Sharma,
  • Uttam Singisetti,
  • Man Hoi Wong,
  • Jinwoo Hwang

DOI
https://doi.org/10.1063/5.0134467
Journal volume & issue
Vol. 11, no. 6
pp. 061113 – 061113-12

Abstract

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Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect of Si implantation and the formation of defects was studied as a function of the dose of implanted atoms, and the detailed mechanism of lattice recovery was observed using both in situ and ex situ annealing of the implanted β-Ga2O3. The implantation created nanoscale dark spots in STEM images, which we identified as local γ-Ga2O3 inclusions generated by the relaxation of lattice due to ⟨010⟩ screw dislocations created by the implantation. The number and size of γ-Ga2O3 regions increased as the Si dose increased, and eventually the γ-Ga2O3 crystal phase (with stacking defects) took over the entire implanted volume when the peak Si concentration was over ∼1020 cm−3. Annealing above 1100 °C disintegrates the local γ-Ga2O3 phase and returns the structure to defect-free, single crystal β phase, likely indicating that point defects (such as Si interstitials and cation vacancies) are spatially redistributed by the annealing. However, when the structure is completely transformed to γ-Ga2O3 by the implantation, post-annealing leaves a high concentration of dislocations within the β phase, which relates to the inhomogeneous distribution of Si atoms detected by secondary ion mass spectrometry.