Realizing Full Coverage of Stable Perovskite Film by Modified Anti-Solvent Process

Long Ji; Ting Zhang; Yafei Wang; Peng Zhang; Detao Liu; Zhi Chen; Shibin Li

doi:10.1186/s11671-017-2117-6

Nanoscale Research Letters (May 2017)

Realizing Full Coverage of Stable Perovskite Film by Modified Anti-Solvent Process

Long Ji,
Ting Zhang,
Yafei Wang,
Peng Zhang,
Detao Liu,
Zhi Chen,
Shibin Li

Affiliations

Long Ji: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)
Ting Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)
Yafei Wang: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)
Peng Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)
Detao Liu: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)
Zhi Chen: Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering, University of Kentucky
Shibin Li: State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC)

DOI: https://doi.org/10.1186/s11671-017-2117-6
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 6

Abstract

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Abstract Lead-free solution-processed solid-state photovoltaic devices based on formamidinium tin triiodide (FASnI3) and cesium tin triiodide (CsSnI3) perovskite semiconductor as the light harvester are reported. In this letter, we used solvent engineering and anti-solvent dripping method to fabricate perovskite films. SnCl2 was used as an inhibitor of Sn4+ in FASnI3 precursor solution. We obtained the best films under the function of toluene or chlorobenzene in anti-solvent dripping method and monitored the oxidation of FASnI3 films in air. We chose SnF2 as an additive of CsSnI3 precursor solution to prevent the oxidation of the Sn2+, improving the stability of CsSnI3. The experimental results we obtained can pave the way for lead-free tin-based perovskite solar cells (PSCs).

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

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