State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin, China
Hao Chen
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Guojun Liu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Cheng Cheng
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Quan Li
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Yi Qu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Qiongtao Xie
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Jiang Zhu
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering Hainan Normal University, Haikou, Hainan, China
Quan Zheng
Changchun New Industries Optoelectronics Technology Company Ltd, Changchun, Jilin, China
All-solid-state 228.5 nm Deep Ultraviolet (DUV) laser has been studied with two-step second harmonious generation (SHG) of Nd:YVO4 914 nm fundamental laser, by optimizing its resonator design and SHG configurations. Adopting three-mirror folded V cavity and acousto-optical Q-switching, high peak power 457 nm laser output has been achieved by intracavity frequency-doubling of LD pumped Nd:YVO4 914 nm fundamental laser. At pump power of 41 W, the average output power for 457 nm laser has reached 600 mW at repetition frequency 10 kHz, 50 ns pulse width. With Type-I phase matching BBO crystal, external frequency doubling of 457 nm blue output was realized and optimized. Under LD pump power of 41 W, DUV laser at 228.5 nm with average output power of 35 mW has been achieved, at repetition frequency 10 kHz and pulse width of 46 ns. Under these conditions, the frequency doubling conversion efficiency is 5.8%, and the DUV laser output power instability is less than 2% in 2-hour test.
