Magnetic and Resonance Properties of a Low-Dimensional Cobalt–Aluminum Oxide–Germanium Film Tunnel Junction Deposited by Magnetron Sputtering

Abstract

The temperature behavior of saturation magnetization and the temperature behavior of the integral signal intensity in electron magnetic resonance spectra is experimentally studied comprehensively using a low-dimensional Al2O3/Ge/Al2O3/Co (aluminum oxide–cobalt–aluminum oxide–germanium) tunnel junction with different deposition velocities of a ferromagnetic metal (Co) thin layer and non-magnetic layers (Al2O3/Ge/Al2O3). The cobalt ferromagnetic layer was deposited on aluminum oxide in two ways: in one cycle of creating the structure and with atmospheric injection before deposition of the cobalt layer. The thermomagnetic curves revealed the appearance of minima observed at low temperatures on both sides of the cobalt layer. Possible sources of precession perturbations at low temperatures can be explained by: the influence of the Al2O3 layer structure on the Al2O3/Co interface; residual gases in the working chamber atmosphere and finely dispersed cobalt pellets distributed over the cobalt film thickness. The work offers information of great significance in terms of practical application, for both fundamental physics and potential applications of ultrathin films.

Keywords

• ferromagnetic film
• anisotropy tunnel contact
• aluminum oxides