Nanomaterials (Nov 2022)

Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping

  • Anastasiia V. Sokolova,
  • Ivan D. Skurlov,
  • Anton A. Babaev,
  • Peter S. Perfenov,
  • Maksim A. Miropoltsev,
  • Denis V. Danilov,
  • Mikhail A. Baranov,
  • Ilya E. Kolesnikov,
  • Aleksandra V. Koroleva,
  • Evgeniy V. Zhizhin,
  • Aleksandr P. Litvin,
  • Anatoly V. Fedorov,
  • Sergei A. Cherevkov

DOI
https://doi.org/10.3390/nano12234198
Journal volume & issue
Vol. 12, no. 23
p. 4198

Abstract

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Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.

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