Excited-state spin-resonance spectroscopy of V $${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ B − defect centers in hexagonal boron nitride

Abstract

The negatively charged boron vacancy in hBN shows promise as a quantum sensor, but, until recently, the focus has been on its ground-state properties. Here, the authors report temperature-dependent spin-resonance optical spectroscopy of the orbital excited state.