Simulation of Field Assisted Sintering of Silicon Germanium Alloys

Anastasiia Tukmakova; Anna Novotelnova; Kseniia Samusevich; Andrey Usenko; Dmitriy Moskovskikh; Alexandr Smirnov; Ekaterina Mirofyanchenko; Toshiyuki Takagi; Hiroyuki Miki; Vladimir Khovaylo

doi:10.3390/ma12040570

Materials (Feb 2019)

Simulation of Field Assisted Sintering of Silicon Germanium Alloys

Anastasiia Tukmakova,
Anna Novotelnova,
Kseniia Samusevich,
Andrey Usenko,
Dmitriy Moskovskikh,
Alexandr Smirnov,
Ekaterina Mirofyanchenko,
Toshiyuki Takagi,
Hiroyuki Miki,
Vladimir Khovaylo

Affiliations

Anastasiia Tukmakova: Faculty of Cryogenic Engineering, ITMO University, St. Petersburg 197101, Russia
Anna Novotelnova: Faculty of Cryogenic Engineering, ITMO University, St. Petersburg 197101, Russia
Kseniia Samusevich: Faculty of Cryogenic Engineering, ITMO University, St. Petersburg 197101, Russia
Andrey Usenko: Department of Functional Nanosystems and High Temperature Materials, National University of Science and Technology “MISiS”, Moscow 119049, Russia
Dmitriy Moskovskikh: Department of Functional Nanosystems and High Temperature Materials, National University of Science and Technology “MISiS”, Moscow 119049, Russia
Alexandr Smirnov: Department of Functional Nanosystems and High Temperature Materials, National University of Science and Technology “MISiS”, Moscow 119049, Russia
Ekaterina Mirofyanchenko: JSC Scientific and Production Association “Orion”, Moscow 111538, Russia
Toshiyuki Takagi: Institute of Fluid Sciences, Tohoku University, Sendai 980-8577, Japan
Hiroyuki Miki: Frontier Research Institute for Interdisciplinary Science, Tohoku University, Sendai 980-8578, Japan
Vladimir Khovaylo: Department of Functional Nanosystems and High Temperature Materials, National University of Science and Technology “MISiS”, Moscow 119049, Russia

DOI: https://doi.org/10.3390/ma12040570
Journal volume & issue: Vol. 12, no. 4
p. 570

Abstract

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We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to a significant, up to 60 °C, temperature difference within the specimen volume for the case of the sintering temperature at 1150 °C.

Published in Materials

ISSN: 1996-1944 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering; Technology: Engineering (General). Civil engineering (General); Science: Natural history (General): Microscopy; Science: Physics: Descriptive and experimental mechanics
Website: http://www.mdpi.com/journal/materials/

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