Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Abstract

As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-power applications due to the normally off operation and robust gate reliability. However, the threshold and gate-breakdown voltages are relatively low compared with Si-based and SiC-based power MOSFETs. The epitaxial layers and device structures were optimized to enhance the main characteristics of pGaN HEMTs. In this work, various methods to improve threshold and gate-breakdown voltages are presented, such as the top-layer optimization of the pGaN cap, hole-concentration enhancement, the low-work-function gate electrode, and the MIS-type pGaN gate. The discussion of the main gate characteristic enhancement of p-type GaN gate HEMTs would accelerate the development of GaN power electronics to some extent.

Keywords

• gallium nitride
• threshold voltage
• gate-breakdown voltage
• breakdown field
• p-type doped gallium nitride high-electron-mobility transistor (p-GaN HEMT)