Investigation and Comparison of the Performance for β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate
Zuyong Yan,
Shan Li,
Zeng Liu,
Jianying Yue,
Xueqiang Ji,
Jinjin Wang,
Shanglin Hou,
Gang Wu,
Jingli Lei,
Guobin Sun,
Peigang Li,
Weihua Tang
Affiliations
Zuyong Yan
School of Science, State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
Shan Li
College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Zeng Liu
School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China
Jianying Yue
School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Xueqiang Ji
School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Jinjin Wang
School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Shanglin Hou
School of Science, State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
Gang Wu
School of Science, State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
Jingli Lei
School of Science, State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China
Guobin Sun
Cloud Network Operations Center, China Unicom Gansu Branch, Lanzhou 730050, China
Peigang Li
School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Weihua Tang
College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga2O3 layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga2O3 layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga2O3 photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples.
