Depositing diamond film on high Co content cemented carbide using CrSiN film as an interlayer

Abstract

In order to solve the problem that it is difficult to grow diamond films with high binding force on the surface of high cobalt cemented carbide, the Cr/CrSiN film was used as the transition layer, and the nanocrystalline diamond films (NCD), the submicrocrystalline diamond films (SMCD) and the microcrystalline diamond films (MCD) were deposited on the cemented carbide by hot filament chemical vapor deposition method, and their binding forces were studied. The results show that the Cr/CrSiN transition layer can be used to deposit diamond films with excellent bonding strength on the surface of high cobalt cemented carbide. NCD has the best binding force, followed by SMCD, and MCD has the worst binding force. When the grain size of the diamond film increases, the bonding forces of the diamond film weaken due to the poor toughness of the diamond films and severe carbonization of the transition layer. When the crystal size of the diamond film increases, the binding force of the diamond film becomes weak due to the poor toughness of the diamond film and serious carbonization of the transition layer.

Keywords

• diamond film
• cemented carbide
• bonding force
• stress