TECHNOLOGY AND MEASUREMENTS OF MAGNETORESISTANCE IN THIN-LAYERED FERROMAGNETIC STRUCTURES

Abstract

The paper presents the technology for obtaining NiFe/Ti/NiFe layer structures in MEMS technology using magnetron purge with the assumption of being used as semi-magnetic sensors. A series of samples was made on a glass substrate with a sandwich structure, where the individual layers were 100 nm NiFe, 10 nm Ti and on top again NiFe with a thickness of 100 nm. Measurements of DC resistance of the obtained structures in a constant magnetic field, which was produced by neodymium magnets and an electromagnet, were carried out. The obtained results confirm the occurrence of phenomena known as the magnetoresistance effect. The influence of the spatial arrangement of structures relative to the constant magnetic field vector was checked and proved.

Keywords

• static magnetic field
• magnetron sputtering
• MEMS
• magnetoresistance