The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts
Moh’d Rezeq,
Ahmed Ali,
Shashikant P. Patole,
Khouloud Eledlebi,
Ripon Kumar Dey,
Bo Cui
Affiliations
Moh’d Rezeq
Department of Physics, and Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, POB 127788 Abu Dhabi, United Arab Emirates
Ahmed Ali
Department of Physics, and Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, POB 127788 Abu Dhabi, United Arab Emirates
Shashikant P. Patole
Department of Physics, and Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, POB 127788 Abu Dhabi, United Arab Emirates
Khouloud Eledlebi
Department of Physics, and Department of Electrical and Computer Engineering, Khalifa University of Science and Technology, POB 127788 Abu Dhabi, United Arab Emirates
Ripon Kumar Dey
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
Bo Cui
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M–S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.