Terahertz Spin Current Pulses in Antiferromagnetic Oxide: The Role of Vacancy‐Induced Ferromagnetism

Lei Zhang; Huaiwu Zhang; Dainan Zhang; Yuanpeng Li; Tianlong Wen; Zhiyong Zhong; Lichuan Jin

doi:10.1002/sstr.202300076

Small Structures (Oct 2023)

Terahertz Spin Current Pulses in Antiferromagnetic Oxide: The Role of Vacancy‐Induced Ferromagnetism

Lei Zhang,
Huaiwu Zhang,
Dainan Zhang,
Yuanpeng Li,
Tianlong Wen,
Zhiyong Zhong,
Lichuan Jin

Affiliations

Lei Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Huaiwu Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Dainan Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Yuanpeng Li: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Tianlong Wen: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Zhiyong Zhong: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China
Lichuan Jin: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 2006 Xiyuan Avenue Chengdu Sichuan 611731 China

DOI: https://doi.org/10.1002/sstr.202300076
Journal volume & issue: Vol. 4, no. 10
pp. n/a – n/a

Abstract

Read online

Antiferromagnetic oxides have attracted increasing attention for their outstanding peculiarities in spintronics. Crystal lattice defects that are present in antiferromagnetic oxides can influence their physical properties, such as vacancy‐induced ferromagnetism. Meanwhile, the generation and manipulation of ultrafast spin currents of antiferromagnetic insulators are highly desired. Although the generation and detection of terahertz spin current pulses in antiferromagnetic oxides have been realized, the effect of vacancy‐induced ferromagnetism on spin current in antiferromagnetic oxides is not yet known. Herein, the role of vacancy‐induced ferromagnetism on the terahertz spin current in antiferromagnetic nickel oxide thin films is reported. Structural and magnetic characterizations reveal that nickel vacancies effectively break the strong antiferromagnetic exchange coupling, giving rise to the coexistence of antiferromagnetism and ferromagnetism in NiO thin films. Notably, the enhancement of terahertz radiation associated with the photo‐induced ultrafast spin current of NiO thin film with the strongest ferromagnetism is the most significant. Besides, the nonlinear susceptibility tensor parameters related to the antiferromagnetic property of NiO thin films also change distinctly. The findings indicate that the defects of antiferromagnetic materials play a decisive role in the application of antiferromagnetic spintronics in the terahertz field.

Published in Small Structures

ISSN: 2688-4062 (Online)
Publisher: Wiley-VCH
Country of publisher: Germany
LCC subjects: Science: Physics; Science: Chemistry
Website: https://onlinelibrary.wiley.com/journal/26884062

About the journal

Abstract

Keywords