JPhys Photonics (Jan 2023)

An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories

  • S Simos,
  • T Moschos,
  • K Fotiadis,
  • D Chatzitheocharis,
  • T Alexoudi,
  • C Vagionas,
  • D Sacchetto,
  • M Zervas,
  • N Pleros

DOI
https://doi.org/10.1088/2515-7647/acf973
Journal volume & issue
Vol. 5, no. 4
p. 045002

Abstract

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In this work we experimentally demonstrate a Si _3 N _4 photonic integrated circuit which offers row decoding and RAM addressing functionalities. The passive integrated structure comprises a MRR-based wavelength filtering bank scheme in a 2 × 4 configuration, which reveals a suppression ratio in the range of 12–25 dB. The performance of the optical circuit has been evaluated in a system-level testbed, where successful addressing in one RAM row has been achieved. Error-free operation has been accomplished for all cases under study, with the whole row decoder system’s performance to offer a total power penalty of 2.5 dB.

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