International Journal of Electronics and Telecommunications (Sep 2020)

Application of the Averaged Model of the Diode transistorSwitch for Modelling Characteristics of a Boost Converter with an IGBT

  • Paweł Górecki

DOI
https://doi.org/10.24425/ijet.2020.134012
Journal volume & issue
Vol. vol. 66, no. No 3
pp. 555 – 560

Abstract

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DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diodetransistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.

Keywords