Mode-Modulation Structure Based on 650 nm Ridge Waveguide Edge-Emitting Laser

Abstract

Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of edge-emitting laser (EEL) diodes. The effect of the three-trench structure was investigated theoretically and experimentally. The right trench structure laser chips demonstrated good beam quality while maintaining a high power output. An electro-optical conversion efficiency of 56% was demonstrated with a slope efficiency of 1.32 W/A at a 40 mA current. The maximum optical output power reached 40.8 mW.

Keywords

• 650 nm semiconductor laser
• mode modulation
• lateral beam divergence
• ridge waveguide