InfoMat (Mar 2020)

Nanoscale control of grain boundary potential barrier, dopant density and filled trap state density for higher efficiency perovskite solar cells

  • Behzad Bahrami,
  • Sally Mabrouk,
  • Nirmal Adhikari,
  • Hytham Elbohy,
  • Ashim Gurung,
  • Khan M. Reza,
  • Rajesh Pathak,
  • Ashraful H. Chowdhury,
  • Gopalan Saianand,
  • Wenjin Yue,
  • Jiantao Zai,
  • Xuefeng Qian,
  • Mao Liang,
  • Qiquan Qiao

DOI
https://doi.org/10.1002/inf2.12055
Journal volume & issue
Vol. 2, no. 2
pp. 409 – 423

Abstract

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Abstract In this work, grain boundary (GB) potential barrier ( Δφ GB), dopant density (Pnet), and filled trap state density (PGB,trap) were manipulated at the nanoscale by exposing the fabricated perovskite films to various relative humidity (RH) environments. Spatial mapping of surface potential in the perovskite film revealed higher positive potential at GBs than inside the grains. The average Δφ GB, Pnet, and PGB,trap in the perovskite films decreased from 0% RH to 25% RH exposure, but increased when the RH increased to 35% RH and 45% RH. This clearly indicated that perovskite solar cells fabricated at 25% RH led to the lowest average GB potential, smallest dopant density, and least filled trap states density. This is consistent with the highest photovoltaic efficiency of 18.16% at 25% RH among the different relative humidities from 0% to 45% RH.

Keywords