Âderna Fìzika ta Energetika (Dec 2015)

Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

  • A. I. Vlasenko,
  • V. P. Veleschuk,
  • Z. K. Vlasenko,
  • M. P. Kisselyuk,
  • P. G. Lytovchenko,
  • I. V. Petrenko,
  • V. P. Tartachnyk,
  • M. B. Pinkovska

Journal volume & issue
Vol. 16, no. 4
pp. 362 – 366

Abstract

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Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was revealed that radiation hardness of InGaN/GaN heterostructures depend on the substrate.

Keywords