Magnetoresistance ratio in magnetic tunnel junction with silicon diffused MgO barrier

Tatsuki Watanabe; Minori Goto; Yuichiro Ando; Tsubasa Watakabe; Hikaru Nomura; Yoshishige Suzuki

doi:10.35848/1882-0786/ad0ba1

Applied Physics Express (Jan 2023)

Magnetoresistance ratio in magnetic tunnel junction with silicon diffused MgO barrier

Tatsuki Watanabe,
Minori Goto,
Yuichiro Ando,
Tsubasa Watakabe,
Hikaru Nomura,
Yoshishige Suzuki

Affiliations

Tatsuki Watanabe: Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Minori Goto: ORCiD; Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Center for Spintronics Research Network (CSRN), Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Osaka University , 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan; Graduate School of Engineering, University of Fukui , 3-9-1, Bunkyo, Fukui, Fukui 910-8507, Japan
Yuichiro Ando: Department of Electronic Science and Engineering, Kyoto University , 1, Nishikyo, Kyoto, Kyoto 615-8510, Japan
Tsubasa Watakabe: Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan
Hikaru Nomura: Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Center for Spintronics Research Network (CSRN), Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Osaka University , 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
Yoshishige Suzuki: Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Center for Spintronics Research Network (CSRN), Graduate School of Engineering Science, Osaka University , 1-3, Machikaneyamacho, Toyonaka, Osaka 560-8531, Japan; Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Osaka University , 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan

DOI: https://doi.org/10.35848/1882-0786/ad0ba1
Journal volume & issue: Vol. 17, no. 1
p. 013001

Abstract

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We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 °C; when deposited at 700 °C, Si diffused into the MgO layer. The MTJ with silicon deposited at 700 °C attained high MR ratios of up to 38.7 and 2.9% at t _Si = 0.19 and 1.3 nm, respectively. Low-temperature measurements established that the temperature dependence of the MR ratio and resistance between MTJs with and without diffused silicon are significantly different. This behavior confirms that the Si-MgO channel acts as an impurity semiconductor in the MTJ.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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