Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation
Jiawei Chen,
Yudong Li,
Heini Maliya,
Qi Guo,
Dong Zhou,
Lin Wen
Affiliations
Jiawei Chen
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China; University of Chinese Academy of Sciences, No. 19-A Yuquan Road, Shijingshan District, Beijing 100049, PR China
Yudong Li
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China; Corresponding author.
Heini Maliya
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China; Corresponding author.
Qi Guo
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China
Dong Zhou
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China
Lin Wen
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, PR China
A long-term annealing experiment was performed using 850 nm vertical-cavity surface-emitting lasers (VCSELs) irradiated with 10 MeV protons. Static parameters such as the threshold current, slope efficiency, and light output power were tested using annealing currents above and below the threshold. The experimental results indicated that these parameters gradually recovered with annealing time, and the degree of recovery was proportional to the annealing current. In addition, curve fitting was performed to obtain the direct relationship between the slope efficiency and annealing current. A comprehensive investigation of the annealing behavior of VCSELs is crucial for device applications in harsh radiation environments.
