ECS Advances (Jan 2024)

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

  • Seokhwi Song,
  • Eungju Kim,
  • Kyunghoo Kim,
  • Jangho Bae,
  • Jinho Lee,
  • Chang Hwa Jung,
  • Hanjin Lim,
  • Hyeongtag Jeon

DOI
https://doi.org/10.1149/2754-2734/ad1a75
Journal volume & issue
Vol. 3, no. 1
p. 012002

Abstract

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We investigated Ti-doped ZrO _2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe _2 ) _3 ) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O _3 thermal atomic layer deposition process. In addition, the effect of Ti doping concentration on the chemical bonding and electrical properties of the Ti-doped ZrO _2 thin films was studied. O _3 was used at a high concentration of 400 g m ^−3 . We varied the Ti doping concentration by controlling the rate of the supercycle process in the ZrO _2 process window of 200 °C–300 °C. As a result, the highest dielectric constant was observed at a Ti doping concentration of 2.5% because it enhances the crystallinity of ZrO. Excessive Ti doping hinders crystal formation.

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