Nanomaterials (Jan 2022)

Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates

  • Mircea Dragoman,
  • Adrian Dinescu,
  • Daniela Dragoman,
  • Cătălin Palade,
  • Valentin Şerban Teodorescu,
  • Magdalena Lidia Ciurea

DOI
https://doi.org/10.3390/nano12020279
Journal volume & issue
Vol. 12, no. 2
p. 279

Abstract

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We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel HfO2/p-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the p-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current.

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