Micro-Nanoarchitectonics of Ga<sub>2</sub>O<sub>3</sub>/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection
Ruifan Tang,
Guanqi Li,
Xun Hu,
Na Gao,
Jinchai Li,
Kai Huang,
Junyong Kang,
Rong Zhang
Affiliations
Ruifan Tang
School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang 414006, China
Guanqi Li
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Xun Hu
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Na Gao
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Jinchai Li
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Kai Huang
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Junyong Kang
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
Rong Zhang
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga2O3/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga2O3/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga2O3/GaN film. The responsivity was over 1500 A/W for the 270–360 nm band at 7 V. The external quantum efficiency was up to 1.02 × 106% for 280 nm. Moreover, the responsivity was further increased to 2.65 × 104 A/W for 365 nm and over 1.5 × 104 A/W for 270–360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga2O3/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga2O3 surface and Ga2O3/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.
