Nanoscale Research Letters (Jan 2010)

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

  • Liu JM,
  • Liu XL,
  • Xu XQ,
  • Wang J,
  • Li CM,
  • Wei HY,
  • Yang SY,
  • Zhu QS,
  • Fan YM,
  • Zhang XW,
  • Wang ZG

Journal volume & issue
Vol. 5, no. 8
pp. 1340 – 1343

Abstract

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Abstract X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

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