Polariton lasing in InGaN quantum wells at room temperature

Wu Jinzhao; Long Hao; Shi Xiaoling; Luo Song; Chen Zhanghai; Feng Zhechuan; Ying Leiying; Zheng Zhiwei; Zhang Baoping

doi:10.29026/oea.2019.190014

Opto-Electronic Advances (Dec 2019)

Polariton lasing in InGaN quantum wells at room temperature

Wu Jinzhao,
Long Hao,
Shi Xiaoling,
Luo Song,
Chen Zhanghai,
Feng Zhechuan,
Ying Leiying,
Zheng Zhiwei,
Zhang Baoping

Affiliations

Wu Jinzhao: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Long Hao: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Shi Xiaoling: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Luo Song: Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
Chen Zhanghai: Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
Feng Zhechuan: School of Physical Science and Technology, Guangxi University, Nanning 530004, China
Ying Leiying: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Zheng Zhiwei: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
Zhang Baoping: Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

DOI: https://doi.org/10.29026/oea.2019.190014
Journal volume & issue: Vol. 2, no. 12
pp. 190014-1 – 190014-5

Abstract

Read online

In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.

Published in Opto-Electronic Advances

ISSN: 2096-4579 (Print)
Publisher: Institue of Optics and Electronics, Chinese Academy of Sciences
Country of publisher: China
LCC subjects: Science: Physics: Optics. Light
Website: http://www.oejournal.org/oea

About the journal

Abstract

Keywords