Gradual mechanical deformation discernible devices based on flexible self-powered Ⅲ-nitride pin photoelectrochemical piezo-phototronics

Junjun Xue; Xinya Tao; Xu Wang; Tongdao Pan; Zhouyu Chen; Guanyu Xu; Qing Cai; Pengfei Shao; Yushen Liu; Zengli Huang; Ting Zhi; Bin Liu; Dunjun Chen; Rong Zhang; Jin Wang

doi:10.1016/j.mtadv.2025.100590

Materials Today Advances (Jun 2025)

Gradual mechanical deformation discernible devices based on flexible self-powered Ⅲ-nitride pin photoelectrochemical piezo-phototronics

Junjun Xue,
Xinya Tao,
Xu Wang,
Tongdao Pan,
Zhouyu Chen,
Guanyu Xu,
Qing Cai,
Pengfei Shao,
Yushen Liu,
Zengli Huang,
Ting Zhi,
Bin Liu,
Dunjun Chen,
Rong Zhang,
Jin Wang

Affiliations

Junjun Xue: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
Xinya Tao: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
Xu Wang: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
Tongdao Pan: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
Zhouyu Chen: Portland Institute of NJUPT, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
Guanyu Xu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China
Qing Cai: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China
Pengfei Shao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China
Yushen Liu: Yancheng Polytechnic College, 285 Jiefang South Road, Yancheng, 224005, China
Zengli Huang: Suzhou Laboratory, 388 Ruoshui Road, Suzhou, 215123, China; Corresponding author.
Ting Zhi: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China; Corresponding author.
Bin Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China
Dunjun Chen: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China; Corresponding author.
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 163 Xianlin Avenue, Nanjing, 210093, China
Jin Wang: GaN-X Laboratory, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China; Corresponding author.

DOI: https://doi.org/10.1016/j.mtadv.2025.100590
Journal volume & issue: Vol. 26
p. 100590

Abstract

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The piezoelectricity of Ⅲ-nitrides distinguishes themselves from traditional semiconductors and evoke two novel effects: the piezotronic and piezo-phototronic effect. As a typical representative in piezotronics, due to the re-distribution of piezoelectric charges, the piezoelectric nanogenerator can directly make impulse-type electric response on dynamic strain. This determines the piezoelectric nanogenerator to be more sensitive to rapid motion and unable to make effective response on the slow deformation. Here we have proposed a configuration of solid-state electrolyte flexible piezo-phototronics based photoelectrochemical photodectors (PEC PD) constructed by exfoliated Ⅲ-nitride pin membrane. By inserting InGaN single quantum well into GaN pn-junction, the carrier screening is diminished by enlarged depletion region of pin junction, which enhances the ability of piezo-polarization charge on modifying the energy band at interface; moreover, the carrier transport within pin junction can be influenced by adjusting the quantum-confined-Stark effect. Thereout, compared to pin-PEC PD without deformation, when the pin-PEC PD are under the convex/concave bending, the photocurrent of the PD shows increase/decrease, respectively, which can achieve the function of slow deformation recognition. The miniaturized flexible PEC cell equipped with the bluetooth-linked portable electrochemical workstation shows tremendous potential in the field of application of strain gauges with complex operation.

Published in Materials Today Advances

ISSN: 2590-0498 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-today-advances

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