Nuclear Technology and Radiation Protection (Jan 2014)

Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation

  • OO Myo Min,
  • Rashid Nahrul Khair Bin Alang Md,
  • Karim Julia Bin Abdul,
  • Mohamed Zin Muhammad Rawi Bin,
  • Rahim Rosminazuin Bt.Ab.,
  • Azman Amelia Wong,
  • Hasbullah Nurul Fadzlin

DOI
https://doi.org/10.2298/NTRP1401046O
Journal volume & issue
Vol. 29, no. 1
pp. 46 – 52

Abstract

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Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

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