Effects of Al<sub>2</sub>O<sub>3</sub> Thickness in Silicon Heterojunction Solar Cells
Doowon Lee,
Myoungsu Chae,
Jong-Ryeol Kim,
Hee-Dong Kim
Affiliations
Doowon Lee
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
Myoungsu Chae
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
Jong-Ryeol Kim
Department of Optical Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
Hee-Dong Kim
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
In this paper, we investigate the effects of aluminum oxide (Al2O3) antireflection coating (ARC) on silicon heterojunction (SHJ) solar cells. Comprehensive ARCs simulation with Al2O3/ITO/c-Si structure is carried out and the feasibility to improve the short circuit current density (JSC) is demonstrated. Based on the simulation results, we apply Al2O3 ARC on SHJ solar cells, and the increasement in JSC to 1.5 mA/cm2 is observed with an Al2O3 layer thickness of 20 nm. It is because the total reflectance of SHJ solar cells is decreased by the shifting of the wavelength range on constructive and destructive light interference. As a result, we believe that the proposed Al2O3 ARC can support an effective engineering technic to increase JSC and efficiency of SHJ solar cells.
