Nature Communications (Sep 2018)
Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
- Xiaoshan Wang,
- Zhiwei Wang,
- Jindong Zhang,
- Xiang Wang,
- Zhipeng Zhang,
- Jialiang Wang,
- Zhaohua Zhu,
- Zhuoyao Li,
- Yao Liu,
- Xuefeng Hu,
- Junwen Qiu,
- Guohua Hu,
- Bo Chen,
- Ning Wang,
- Qiyuan He,
- Junze Chen,
- Jiaxu Yan,
- Wei Zhang,
- Tawfique Hasan,
- Shaozhou Li,
- Hai Li,
- Hua Zhang,
- Qiang Wang,
- Xiao Huang,
- Wei Huang
Affiliations
- Xiaoshan Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Zhiwei Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Jindong Zhang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Xiang Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Zhipeng Zhang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Jialiang Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Zhaohua Zhu
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Zhuoyao Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Yao Liu
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Xuefeng Hu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University (NanjingTech)
- Junwen Qiu
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University (NanjingTech)
- Guohua Hu
- Cambridge Graphene Centre, University of Cambridge
- Bo Chen
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University
- Ning Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Qiyuan He
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University
- Junze Chen
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University
- Jiaxu Yan
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Wei Zhang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University (NanjingTech)
- Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge
- Shaozhou Li
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications
- Hai Li
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University
- Qiang Wang
- School of Chemistry and Molecular Engineering, Nanjing Tech University (NanjingTech)
- Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Wei Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- DOI
- https://doi.org/10.1038/s41467-018-06053-z
- Journal volume & issue
-
Vol. 9,
no. 1
pp. 1 – 11
Abstract
Controlling the composition and crystal phase of layered heterostructures is important. Here, the authors report the liquid-phase epitaxial growth of Sn0.5W0.5S2 nanosheets with 83% metallic phase on SnS2 nanoplates, which are used as 100 ppb level chemiresistive gas sensors at room temperature.
