AIP Advances (Mar 2023)

Nanostructured Si–Ge thermoelectric material for 1200 V/W highly sensitive infrared thermopile sensor device

  • Kyohei Kakuyama,
  • Kotaro Hirose,
  • Masahiro Adachi,
  • Tsunehiro Takeuchi,
  • Masafumi Kimata

DOI
https://doi.org/10.1063/5.0144938
Journal volume & issue
Vol. 13, no. 3
pp. 035128 – 035128-4

Abstract

Read online

In this paper, we report the characteristics of a thermopile infrared sensor in which a nanostructured Si–Ge thermoelectric material is used. Although the thermopile infrared sensor is capable of being operated without power consumption, a challenge has been improving its sensitivity. With the aim of improving its sensitivity, we have realized a nanostructured Si–Ge thermoelectric material with low thermal conductivity (0.8 W/m K or less) by forming nanocrystals through heat treatment of amorphous Si–Ge. The thermopile infrared sensor composed of this material exhibited a high sensitivity of 1200 V/W at a pressure of 1.0 × 10−1 Pa or less.