Data on the early oxidation of SiO2-coated pure Ti and bulk Ti5Si3 at 800 °C

Abstract

Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO2 and bulk Ti5Si3 was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O2/4 SCCM Ar environment (approximately pO2 = 0.2 atm/20.3 kPa). Specimens were characterized using transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy. The data in this article accompanies research article “Early oxidation behavior of Si-coated titanium” [1], which contains further discussion. The data for this article is hosted at the Materials Commons data repository and is available for download at https://materialscommons.org/mcapp/#/data/dataset/b8bc8038-a735-4cb9-9a9e-a0fb912b248c.