AIP Advances
(Mar 2012)
Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies
Xingquan Zou,
Mi He,
Daniel Springer,
Dongwook Lee,
Saritha K. Nair,
Siew Ann Cheong,
Tom Wu,
C. Panagopoulos,
D. Talbayev,
Elbert E. M. Chia
Affiliations
Xingquan Zou
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Mi He
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Daniel Springer
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Dongwook Lee
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Saritha K. Nair
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Siew Ann Cheong
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Tom Wu
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
C. Panagopoulos
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
D. Talbayev
Department of Physics and Engineering Physics, 2001 Percival Stern Hall, 6400 Freret street, New Orleans, Louisiana 70118, USA
Elbert E. M. Chia
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
DOI
https://doi.org/10.1063/1.3679725
Journal volume & issue
Vol. 2,
no. 1
pp.
012120
– 012120-6
Abstract
Read online
We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity σ1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature. We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.
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