A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

Yukun Li; Yong Zhang; Xiao Li; Yapei Chen; Fei Xiao; Wei Cheng; Yan Sun; Haiyan Lu; Ruimin Xu

doi:10.1109/ACCESS.2019.2930800

IEEE Access (Jan 2019)

A High Conversion Gain 210-GHz InP DHBT Sub-Harmonic Mixer Using Gain-Enhanced Structure

Yukun Li,
Yong Zhang,
Xiao Li,
Yapei Chen,
Fei Xiao,
Wei Cheng,
Yan Sun,
Haiyan Lu,
Ruimin Xu

Affiliations

Yukun Li: ORCiD; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yong Zhang: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Xiao Li: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Yapei Chen: ORCiD; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Fei Xiao: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
Wei Cheng: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Yan Sun: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Haiyan Lu: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Ruimin Xu: School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/ACCESS.2019.2930800
Journal volume & issue: Vol. 7
pp. 101453 – 101458

Abstract

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In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-μm emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the fLO+IF and fIF and also amplify the f2LO+IF. For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with fIF = 1 GHz, fLO = 106 GHz, and PIF = -26 dBm PLO = 3 dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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