Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
Yuanhao Miao,
Hongxiao Lin,
Ben Li,
Tianyu Dong,
Chuangqi He,
Junhao Du,
Xuewei Zhao,
Ziwei Zhou,
Jiale Su,
He Wang,
Yan Dong,
Bin Lu,
Linpeng Dong,
Henry H. Radamson
Affiliations
Yuanhao Miao
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Hongxiao Lin
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Ben Li
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Tianyu Dong
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Chuangqi He
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Junhao Du
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Xuewei Zhao
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Ziwei Zhou
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Jiale Su
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
He Wang
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Yan Dong
Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Bin Lu
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Linpeng Dong
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Henry H. Radamson
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.
