Improved Charge Transfer Contribution by Cosputtering Ag and ZnO
Bingbing Han,
Shuang Guo,
Sila Jin,
Eungyeong Park,
Xiangxin Xue,
Lei Chen,
Young Mee Jung
Affiliations
Bingbing Han
Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Shuang Guo
Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Sila Jin
Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Eungyeong Park
Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
Xiangxin Xue
Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Lei Chen
Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Jilin Normal University, Ministry of Education, Changchun 130103, China
Young Mee Jung
Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chunchon 24341, Korea
A two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the Ag sputtering power, a redshift of the SPR peak was obtained. Moreover, improved SERS activity occurred because of the electromagnetic (EM) contribution from the increasing Ag content and the charge transfer (CT) contribution from the introduction of ZnO. More importantly, the Hall effect was employed to evaluate the carrier density effect on the SERS contribution of the Ag/ZnO film. The increase in the carrier density as the Ag sputtering power increased indicated an increasing number of free electrons stored in the Ag/ZnO film, which was accompanied by improved EM and CT contributions.
