Journal of Engineering and Sustainable Development (Sep 2007)
Simulation of Resistance Modulation in MOSFETs
Abstract
Simulation results for the resistance modulation in metal-semiconductor field effect transistors (MOSFETs) are presented. The numerical simulations show that the resistance fluctuation does increase as the trap area is reduced, passes through a maximum and finally decrease towards zero. The comparison of the simulated results with typical experimental Random Telegraph Signal (RTS) data shows an overall good agreement.
