Nature Communications (Feb 2021)

Semiconductor-less vertical transistor with I ON/I OFF of 106

  • Jun-Ho Lee,
  • Dong Hoon Shin,
  • Heejun Yang,
  • Nae Bong Jeong,
  • Do-Hyun Park,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Eunah Kim,
  • Sang Wook Lee,
  • Sung Ho Jhang,
  • Bae Ho Park,
  • Young Kuk,
  • Hyun-Jong Chung

DOI
https://doi.org/10.1038/s41467-021-21138-y
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 8

Abstract

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In field-effect transistors, a semiconducting channel is indispensable for device switching. Here, the authors demonstrate semiconductor-less switching via modulation of the field emission barrier height across a graphene-hBN interface with ON/OFF ratio of 106.