Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films

Kristjan Kalam; Mark-Erik Aan; Joonas Merisalu; Markus Otsus; Peeter Ritslaid; Kaupo Kukli

doi:10.3390/cryst14100909

Crystals (Oct 2024)

Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films

Kristjan Kalam,
Mark-Erik Aan,
Joonas Merisalu,
Markus Otsus,
Peeter Ritslaid,
Kaupo Kukli

Affiliations

Kristjan Kalam: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Mark-Erik Aan: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Joonas Merisalu: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Markus Otsus: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Peeter Ritslaid: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia
Kaupo Kukli: Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia

DOI: https://doi.org/10.3390/cryst14100909
Journal volume & issue: Vol. 14, no. 10
p. 909

Abstract

Read online

Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguishable differences between low and high resistance states after 2500 switching cycles.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

About the journal

Abstract

Keywords