Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Y. S. Zhi; P. G. Li; P. C. Wang; D. Y. Guo; Y. H. An; Z. P. Wu; X. L. Chu; J. Q. Shen; W. H. Tang; C. R. Li

doi:10.1063/1.4941061

AIP Advances (Jan 2016)

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Y. S. Zhi,
P. G. Li,
P. C. Wang,
D. Y. Guo,
Y. H. An,
Z. P. Wu,
X. L. Chu,
J. Q. Shen,
W. H. Tang,
C. R. Li

Affiliations

Y. S. Zhi: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
P. G. Li: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
P. C. Wang: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
D. Y. Guo: State Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, China
Y. H. An: State Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, China
Z. P. Wu: State Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, China
X. L. Chu: State Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, China
J. Q. Shen: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China
W. H. Tang: State Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, China
C. R. Li: Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

DOI: https://doi.org/10.1063/1.4941061
Journal volume & issue: Vol. 6, no. 1
pp. 015215 – 015215-8

Abstract

Read online

Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

About the journal