Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals
Z.-S. Feng,
Z.-H. Kang,
X.-M. Li,
Zeng-Bin Wang,
J.-Y. Gao,
Yu. M. Andreev,
V. V. Atuchin,
K. A. Kokh,
G. V. Lanskii,
A. I. Potekaev,
A. V. Shaiduko,
V. A. Svetlichnyi
Affiliations
Z.-S. Feng
Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
Z.-H. Kang
Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
X.-M. Li
Aviation University of Air Force, 2222 Nanhu Rd., Changchun 130022, China
Zeng-Bin Wang
Quantum Engineering Center, Beijing Institute of Control Devices, Beijing 100854, China
J.-Y. Gao
Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, Jilin University, 2519 Jie-Fang Rd., Changchun 130023, China
Yu. M. Andreev
Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
V. V. Atuchin
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., Novosibirsk, 630090, Russia
K. A. Kokh
Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russia
G. V. Lanskii
Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
A. I. Potekaev
Siberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, Russia
A. V. Shaiduko
Laboratory of Geosphere-Biosphere Interactions, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia
V. A. Svetlichnyi
Siberian Physical-Technical Institute of the Tomsk State University, 1 Novosobornaya Sq., Tomsk 634050, Russia
The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose.
