Temperature and concentration dependencies of mobility of charge carriers in solid solutions (PbS)1–x(Sm2S3)x

Abstract

Temperature dependencies of electrical conduction, of Hall coefficient and mobility of charge carriers (mH) of casting and pressed examples of solid solutions (PbS)1–x(Sm2S3)x (x=0—0,04). Anomalous exponential rise of mH for pressed examples (х=0,001—0,0016) in the interval 77—200 K during rise of temperature is watched. These temperature dependencies of parameters are explained with existence of energetic barriers, created by oxide films in grain boundary. In dependencies of mH, from contents of Sm2S33 in the range of compositions 0,1—0,16 mole % anomalous, which are connected with concentration phase transformation of percolation type, were detected.

Keywords

• carrier mobility
• electrical conductivity
• Hall coefficient
• solid solutions
• temperature dependence
• concentration dependence
• phase transition
• crystallites
• grain boundaries