Dianzi Jishu Yingyong (Aug 2019)

Research progress of THz solid state amplifier

  • Guo Fangjin,
  • Wang Weibo,
  • Chen Zhongfei,
  • Sun Hongzheng,
  • Zhou Xibang,
  • Tao Hongqi

DOI
https://doi.org/10.16157/j.issn.0258-7998.199801
Journal volume & issue
Vol. 45, no. 8
pp. 19 – 25

Abstract

Read online

With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range. THz amplifier plays a key role in THz system because of its function amplifying weak THz signals. This paper introduces the latest research progress of THz monolithic amplifier based on Gallium Nitride(GaN) High Electron Mobility Transistor(HEMT),Indium Phosphide(InP) HEMT and InP Heterojunction Bipolar Transistor/Double Heterojunction Bipolar Transistor(HBT/DHBT).

Keywords