An analytical model for terahertz detection in cylindrical surrounding-gate MOSFETs

Abstract

An analytical model for detection of terahertz radiation by plasma wave in cylindrical surrounding-gate (SRG) MOSFETs is presented. In comparison with traditional drain-current models, the rectification response of terahertz signal due to current self-mixing in conducting channel is considered by solving coupled plasma fluid equations using perturbation method. The resulted model is for the first time dipicting detector response in above threshold, near threshold and subthreshold regimes by a single expression valid for both resonant and nonresonant detection schemes. As no fitting parameters is adopted, the model is physical and predicative. Model validity has been extensively verified through numerically solving differential equations with a wide range of incident wave frequencies, channel doping concentrations, device working temperatures, SRG MOSFET geometry parameters as well as incident wave amplitudes. Model applicability to large input terahertz signal has also been discussed. The presented model is convenient for finding the optimum detector design from a multiparameter space. Its great universality will make it a candidate compact model for future terahertz integrated circuit simulation.