Nature Communications (Mar 2020)

Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon

  • Yijun Xu,
  • Xinyao Shi,
  • Yushuang Zhang,
  • Hongtao Zhang,
  • Qinglin Zhang,
  • Zengli Huang,
  • Xiangfan Xu,
  • Jie Guo,
  • Han Zhang,
  • Litao Sun,
  • Zhongming Zeng,
  • Anlian Pan,
  • Kai Zhang

DOI
https://doi.org/10.1038/s41467-020-14902-z
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 8

Abstract

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Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes.